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Role of surface diffusion in chemical beam epitaxy of InAs nanowires

Publiceringsår: 2004
Språk: Engelska
Sidor: 1961-1964
Publikation/Tidskrift/Serie: Nano Letters
Volym: 4
Nummer: 10
Dokumenttyp: Artikel i tidskrift
Förlag: The American Chemical Society


We present growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates. The nanowires are grown in a chemical beam epitaxy system and exhibit high aspect ratios and high homogeneity in length and width. Investigations of wire growth rate as a function of diameter, density, and time were performed and the results indicate that 80% of the growth is due to In species diffusing from the (111)B substrate surface. Furthermore, we have established that the diffusion length on the {110} wire side surfaces exceeds 10 mum. We also observe a decreasing length growth rate with increasing wire diameter.


  • Nano Technology


  • ISSN: 1530-6992

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