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Single-electron tunneling effects in a metallic double dot device

Publiceringsår: 2002
Språk: Engelska
Sidor: 667-669
Publikation/Tidskrift/Serie: Applied Physics Letters
Volym: 80
Nummer: 4
Dokumenttyp: Artikel i tidskrift
Förlag: American Institute of Physics


We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages.


  • Condensed Matter Physics


  • ISSN: 0003-6951

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