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Understanding the 3D structure of GaAs nanowires

Publiceringsår: 2007
Språk: Engelska
Publikation/Tidskrift/Serie: Nanotechnology
Volym: 18
Nummer: 48
Dokumenttyp: Artikel i tidskrift
Förlag: IOP Publishing


The effects of lamellar twinning in epitaxial particle-assisted GaAs <111>B nanowires are investigated in an extensive high resolution electron

microscopy (HRTEM) study of the low index zones <-100>, <-1-10>, <1-1-1> and

<1-1-2>. As these directions are non-parallel to the (-1-1-1) twin planes we find

that the twin segments exhibit two different zone axes as a consequence of

twinning. In the first three cases the alternative zones were found to be <1-2-2>

<11-4> and <11-5>. These findings are supported by a comparison of

experimental HRTEM images and multi-slice simulations along with fast

Fourier transform mapping. From the appearance of non-overlapping regions

we conclude that the nanowires are bound by {111} facets only. The twin

formation and the development of the stable side facets are discussed


  • Nano Technology


  • ISSN: 0957-4484

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