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Electrical characterization of thin InAs films grown on patterned W/GaAs substrates

In English

Författare

Summary, in English

InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]

Publiceringsår

2009

Språk

Engelska

Sidor

2222-2226

Publikation/Tidskrift/Serie

Journal of Vacuum Science and Technology B

Volym

27

Issue

5

Dokumenttyp

Artikel i tidskrift

Förlag

American Institute of Physics (AIP)

Ämne

  • Materials Engineering

Status

Published

Forskningsgrupp

  • Nano

ISBN/ISSN/Övrigt

  • ISSN: 1520-8567