Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
Författare
Avdelning/ar
Publiceringsår
2012
Språk
Engelska
Dokumenttyp
Konferensbidrag: abstract
Ämne
- Condensed Matter Physics
- Electrical Engineering, Electronic Engineering, Information Engineering
Conference name
MRS Fall Meeting, 2012
Conference date
2012-11-25 - 2012-11-30
Conference place
Boston, MA, United States
Status
Published
Forskningsgrupp
- Nanometer structure consortium (nmC)