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Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

Publiceringsår: 2011
Språk: Engelska
Sidor: 2286-2290
Publikation/Tidskrift/Serie: Nano Letters
Volym: 11
Nummer: Online May 23, 2011
Dokumenttyp: Artikel i tidskrift
Förlag: The American Chemical Society


We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).


  • Nano Technology


  • Nanometer structure consortium (nmC)-lup-obsolete
  • ISSN: 1530-6992

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