A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
Författare
Avdelning/ar
Publiceringsår
2013
Språk
Engelska
Sidor
776-781
Publikation/Tidskrift/Serie
IEEE Transactions on Electron Devices
Volym
60
Issue
2
Fulltext
- Available as PDF - 551 kB
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Dokumenttyp
Artikel i tidskrift
Förlag
IEEE - Institute of Electrical and Electronics Engineers Inc.
Ämne
- Electrical Engineering, Electronic Engineering, Information Engineering
- Condensed Matter Physics
Nyckelord
- transconductance
- nanowire (NW)
- metal–oxide–semiconductor field-effect transistor (MOSFET)
- interface traps
- high-$k$
- frequency
- border traps
- InAs
- InGaAs
- Al2O3
- HfO2
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 0018-9383