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Phase Segregation in AlInP Shells on GaAs Nanowires

Publiceringsår: 2006
Språk: Engelska
Sidor: 2743-2747
Publikation/Tidskrift/Serie: Nano Letters
Volym: 6
Nummer: 12
Dokumenttyp: Artikel i tidskrift
Förlag: The American Chemical Society


We have studied morphology and phase segregation of AlInP shells on GaAs nanowires. Photoluminescence measurements on single core-

shell nanowires indicated variations in the shell composition, and phase segregation was confirmed by cross-sectional scanning transmission

electron microscopy on 30 nm thin slices of the wires. It was discovered that Al-rich domains form in the á112ñ directions where two {110}

shell facets meet during growth. We propose that the mechanism behind this phase segregation is a variation in the chemical potential along

the circumference of the nanowire together with a difference in diffusion lengths for the different growth species. From the morphology of the

core and the shell, we conclude that the side facet growth is temperature dependent forming {112} facets at low growth temperature and

{110} facets at high growth temperature


  • Nano Technology


  • ISSN: 1530-6992

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