Probing Strain in Bent Semiconductor Nanowires with Raman Spectroscopy.
Författare
Summary, in English
We present a noninvasive optical method to determine the local strain in individual semiconductor nanowires. InP nanowires were intentionally bent with an atomic force microscope and variations in the optical phonon frequency along the wires were mapped using Raman spectroscopy. Sections of the nanowires with a high curvature showed significantly broadened phonon lines. These observations together with deformation potential theory show that compressive and tensile strain inside the nanowires is the physical origin of the observed phonon energy variations.
Publiceringsår
2010
Språk
Engelska
Sidor
1280-1286
Publikation/Tidskrift/Serie
Nano Letters
Volym
10
Issue
4
Dokumenttyp
Artikel i tidskrift
Förlag
The American Chemical Society (ACS)
Ämne
- Nano Technology
- Condensed Matter Physics
Status
Published
ISBN/ISSN/Övrigt
- ISSN: 1530-6992